On Density-Gradient Modeling of Tunneling through Insulators
نویسندگان
چکیده
The density gradient model (DG) is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOSFETs) and double barriers show the limitations of the DG model. As a reference the Schrödinger-Bardeen method is taken. ‘Resonant tunneling’ in the density gradient model turns out to be an artifact related to large density differences in the semiconductor regions.
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